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| 2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4511 120 80 6 6 3 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio and General Purpose (Ta=25C) 2SC4511 10max 10max 80min 50min 0.5max 20typ 110typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=-0.5A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 Unit A V 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 O(50 to100), P(70 to140), Y(90 to180) 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.3 ton (s) 0.16typ tstg (s) 2.60typ tf (s) 0.34typ 3.9 BCE IC - VCE Characteristics (Typical) 0m A 15 0m A 1 m 00 A A 80m VCE( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 I C - VBE Temperature Characteristics (Typical) 6 (V CE= 4V) 6 20 5 Collector Current I C (A) 50 mA Collector Current I C( A) 4 2 4 3 30mA Cas e Te mp (Cas e Tem ) p) 1 I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0 0 0 1 2 3 4 -30C 25C 125 IB=10mA C ( (Case 2 20mA 1 2 1 Base-Emittor Voltage V B E( V) Temp ) 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. 2 Collector-Emitter Voltage V C E( V) Base Current I B( A) hFE - IC Characteristics (Typical) (V C E= 4V) 300 DC Curr ent Gain h F E h FE - I C Temperature Characteristics (Typical) (V C E= 4V) 200 125C DC Cur rent Gain h FE j- a( C/W) j-a - t Characteristics 5 100 25C -30C 100 Typ 50 Transient Thermal Resistance 1 50 0.5 0.4 1 10 100 Time t(ms) 1000 2000 30 0.02 0.1 0.5 1 56 20 0.02 0.1 0.5 1 56 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (V C E= 12V) 40 20 10 Cu t-off Fre quen cy f T( M H Z) 30 Collector Curre nt I C( A) 5 Safe Operating Area (Single Pulse) 30 10 m P c - T a Derating 10 DC 0m M aximum Power Dissipa ti on P C( W) s W s ith Typ 20 In fin ite he 20 1 0.5 at si nk 10 10 Without Heatsink Natural Cooling 0.1 Without Heatsink 2 5 10 50 100 0 0 25 50 75 100 125 150 0 -0.02 -0.1 -1 -6 0.05 3 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 110 |
Price & Availability of 2SC4511
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